A perturbation approach for low frequency noise in junction field effect transistors

DOI10.1016/0096-3003(95)00091-7zbMATH Open0846.65075OpenAlexW2081328793MaRDI QIDQ1914616FDOQ1914616

Authors: Riccardo Sacco, Danilo Erricolo, E. Gatti 

Publication date: 26 September 1996

Published in: Applied Mathematics and Computation (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/0096-3003(95)00091-7

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zbMATH Keywords

numerical resultsbox methodlow frequency noisesemiconductor device equationsjunction field effect transistors

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) PDEs in connection with optics and electromagnetic theory (35Q60) Finite difference methods for boundary value problems involving PDEs (65N06) Applications to the sciences (65Z05)

Cites Work

• Some Error Estimates for the Box Method
• Finite element methods (Part 1)
• Title not available (Why is that?)
• Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models
• Convergence of a second-order accurate Petrov-Galerkin scheme for convection-diffusion problems in semiconductors

Cited In (7)

• Bifurcation diagram, noise reduction and period-four cycle on low frequency current oscillations in a semi-insulating GaAs sample
• FET-R-C Circuits: A Unified Treatment—Part II: Extension to Multi-Paths, Noise Figure, and Driving-Point Impedance
• Wavelet-based transistor parameter estimation
• Localization and quantification of noise sources in four-gate field-effect-transistors
• Modified charge fluctuation noise model for electrolyte-insulator-semiconductor devices
• Corrigendum to: ``The transition from generation-recombination noise in bulk semiconductors to discrete switching in small-area semiconductors
• An individual particle approach to noise in pseudomorphic heterojunction field effect transistors

Uses Software

• SPARSPAK

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