Asymptotics of the trap-dominated Gunn effect in p-type Ge
DOI10.1016/S0167-2789(97)82012-XzbMATH Open0939.78502arXivcond-mat/9705247OpenAlexW2041576109MaRDI QIDQ1963305FDOQ1963305
Authors: P. Hernando, M. Kindelan, L. L. Bonilla, Miguel A. Herrero, Juan J. Velázquez
Publication date: 24 January 2000
Published in: Physica D (Search for Journal in Brave)
Full work available at URL: https://arxiv.org/abs/cond-mat/9705247
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Cites Work
- Geometric theory of semilinear parabolic equations
- Theory of periodic and solitary space charge waves in extrinsic semiconductors
- Theory of solitary waves and spontaneous current instabilities in dc voltage biased extrinsic semiconductors
- The Gunn Effect: Instability of the Steady State and Stability of the Solitary Wave in Long Extrinsic Semiconductors
- Gunn instability in finite samples of GaAs. II: Oscillatory states in long samples
Cited In (6)
- The Onset and End of the Gunn Effect in Extrinsic Semiconductors
- The Nonlinear Theory of GUNN's Effect
- Wave dynamics in two-dimensional samples of n-GaAs with point contacts.
- Free boundary problems describing two-dimensional pulse recycling and motion in semiconductors
- The Gunn Effect: Instability of the Steady State and Stability of the Solitary Wave in Long Extrinsic Semiconductors
- Semiconductor superlattices: a model system for nonlinear transport
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