Asymptotics of the trap-dominated Gunn effect in p-type Ge
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Publication:1963305
Abstract: We present an asymptotic analysis of the Gunn effect in a drift-diffusion model---including electric-field-dependent generation-recombination processes---for long samples of strongly compensated p-type Ge at low temperature and under dc voltage bias. During each Gunn oscillation, there are different stages corresponding to the generation, motion and annihilation of solitary waves. Each stage may be described by one evolution equation for only one degree of freedom (the current density), except for the generation of each new wave. The wave generation is a faster process that may be described by solving a semiinfinite canonical problem. As a result of our study we have found that (depending on the boundary condition) one or several solitary waves may be shed during each period of the oscillation. Examples of numerical simulations validating our analysis are included.
Recommendations
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Cites work
- Geometric theory of semilinear parabolic equations
- Gunn instability in finite samples of GaAs. II: Oscillatory states in long samples
- The Gunn Effect: Instability of the Steady State and Stability of the Solitary Wave in Long Extrinsic Semiconductors
- Theory of periodic and solitary space charge waves in extrinsic semiconductors
- Theory of solitary waves and spontaneous current instabilities in dc voltage biased extrinsic semiconductors
Cited in
(6)- The Onset and End of the Gunn Effect in Extrinsic Semiconductors
- The Nonlinear Theory of GUNN's Effect
- Wave dynamics in two-dimensional samples of n-GaAs with point contacts.
- Free boundary problems describing two-dimensional pulse recycling and motion in semiconductors
- The Gunn Effect: Instability of the Steady State and Stability of the Solitary Wave in Long Extrinsic Semiconductors
- Semiconductor superlattices: a model system for nonlinear transport
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