Asymptotics of the trap-dominated Gunn effect in p-type Ge

From MaRDI portal

DOI10.1016/S0167-2789(97)82012-XzbMATH Open0939.78502arXivcond-mat/9705247OpenAlexW2041576109MaRDI QIDQ1963305FDOQ1963305


Authors: P. Hernando, M. Kindelan, L. L. Bonilla, Miguel A. Herrero, Juan J. Velázquez Edit this on Wikidata


Publication date: 24 January 2000

Published in: Physica D (Search for Journal in Brave)

Abstract: We present an asymptotic analysis of the Gunn effect in a drift-diffusion model---including electric-field-dependent generation-recombination processes---for long samples of strongly compensated p-type Ge at low temperature and under dc voltage bias. During each Gunn oscillation, there are different stages corresponding to the generation, motion and annihilation of solitary waves. Each stage may be described by one evolution equation for only one degree of freedom (the current density), except for the generation of each new wave. The wave generation is a faster process that may be described by solving a semiinfinite canonical problem. As a result of our study we have found that (depending on the boundary condition) one or several solitary waves may be shed during each period of the oscillation. Examples of numerical simulations validating our analysis are included.


Full work available at URL: https://arxiv.org/abs/cond-mat/9705247




Recommendations




Cites Work


Cited In (6)





This page was built for publication: Asymptotics of the trap-dominated Gunn effect in \(p\)-type Ge

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q1963305)