Solitary Waves in Semiconductors with Finite Geometry and the Gunn Effect
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Publication:3361318
DOI10.1137/0151037zbMath0734.35141OpenAlexW2072752316MaRDI QIDQ3361318
Publication date: 1991
Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1137/0151037
Related Items (5)
Stability of stationary solutions of extended reaction-diffusion- convection equations on a finite segment ⋮ WIGNER–POISSON AND NONLOCAL DRIFT-DIFFUSION MODEL EQUATIONS FOR SEMICONDUCTOR SUPERLATTICES ⋮ Gunn instability in finite samples of GaAs. I: Stationary states, stability and boundary conditions ⋮ Gunn instability in finite samples of GaAs. II: Oscillatory states in long samples ⋮ Bifurcation of traveling waves in extrinsic semiconductors
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