Diffusion-limited reactions in nanoscale electronics

DOI10.4310/MAA.2019.V26.N2.A4MaRDI QIDQ1985698zbMATH OpenFDO

Authors Ryan M. Evans, Arvind Balijepalli, Anthony José Kearsley

Publication date 7 April 2020

Published in Methods and Applications of Analysis (Search for Journal in Brave)

Full work available at URL https://arxiv.org/abs/1710.07211

zbMATH Keywords

method of linesintegrodifferential equationbiological field effect transistor

Mathematics Subject Classification ID

Biochemistry, molecular biology (92C40) Numerical quadrature and cubature formulas (65D32) Asymptotic approximations, asymptotic expansions (steepest descent, etc.) (41A60) Integro-partial differential equations (45K05) Numerical methods for integral equations (65R20) PDEs in connection with biology, chemistry and other natural sciences (35Q92) Integro-partial differential equations (35R09) Method of lines for initial value and initial-boundary value problems involving PDEs (65M20)

Abstract: A partial differential equation (PDE) was developed to describe time-dependent ligand-receptor interactions for applications in biosensing using field effect transistors (FET). The model describes biochemical interactions at the sensor surface (or biochemical gate) located at the bottom of a solution-well, which result in a time-dependent change in the FET conductance. It was shown that one can exploit the disparate length scales of the solution-well and biochemical gate to reduce the coupled PDE model to a single nonlinear integrodifferential equation (IDE) that describes the concentration of reacting species. Although this equation has a convolution integral with a singular kernel, a numerical approximation was constructed by applying the method of lines. The need for specialized quadrature techniques was obviated and numerical evidence strongly suggests that this method achieves first-order accuracy. Results reveal a depletion region on the biochemical gate, which non-uniformly alters the surface potential of the semiconductor.

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(3)

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• Transport phenomena in biological field effect transistors
• Single dopant diffusion in semiconductor technology

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