Single dopant diffusion in semiconductor technology

DOI10.1002/MMA.447MaRDI QIDQ4452302zbMATH OpenOpenAlexFDO

Authors W. Merz, Annegret Glitzky

Publication date 12 February 2004

Published in Mathematical Methods in the Applied Sciences (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1002/mma.447

zbMATH Keywords

solvabilitydopant-defect pairsmobile point defectsnonlinear reaction-drift-diffusion equations

Mathematics Subject Classification ID

Reaction-diffusion equations (35K57) PDEs in connection with optics and electromagnetic theory (35Q60) Motion of charged particles (78A35) Statistical mechanics of semiconductors (82D37)

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Cited in

(5)

• Local existence result of the single dopant diffusion including cluster reactions of high order
• Nonlocal problems involving spatial structure for coupled reaction-diffusion systems
• Local existence result of the dopant diffusion in arbitrary space dimensions
• Global Existence Result for Pair Diffusion Models
• Global existence for a nonlocal and nonlinear Fokker-Planck equation

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