Single dopant diffusion in semiconductor technology

DOI10.1002/MMA.447zbMATH Open1036.35074OpenAlexW2082451137MaRDI QIDQ4452302FDOQ4452302

Authors: W. Merz, Annegret Glitzky 

Publication date: 12 February 2004

Published in: Mathematical Methods in the Applied Sciences (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/mma.447

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zbMATH Keywords

solvabilitydopant-defect pairsmobile point defectsnonlinear reaction-drift-diffusion equations

Mathematics Subject Classification ID

Reaction-diffusion equations (35K57) PDEs in connection with optics and electromagnetic theory (35Q60) Motion of charged particles (78A35) Statistical mechanics of semiconductors (82D37)

Cited In (5)

• Local existence result of the dopant diffusion in arbitrary space dimensions
• Global Existence Result for Pair Diffusion Models
• Global existence for a nonlocal and nonlinear Fokker-Planck equation
• Local existence result of the single dopant diffusion including cluster reactions of high order
• Nonlocal problems involving spatial structure for coupled reaction-diffusion systems

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