Single dopant diffusion in semiconductor technology

DOI10.1002/mma.447zbMath1036.35074OpenAlexW2082451137MaRDI QIDQ4452302

Wilhelm Merz, Annegret Glitzky

Publication date: 12 February 2004

Published in: Mathematical Methods in the Applied Sciences (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/mma.447

zbMATH Keywords

solvabilitydopant-defect pairsmobile point defectsnonlinear reaction-drift-diffusion equations

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Reaction-diffusion equations (35K57) Statistical mechanics of semiconductors (82D37) Motion of charged particles (78A35)

Related Items (3)

Nonlocal problems involving spatial structure for coupled reaction-diffusion systems ⋮ Local existence result of the dopant diffusion in arbitrary space dimensions ⋮ Global existence for a nonlocal and nonlinear Fokker-Planck equation

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