Shear horizontal wave in a piezoelectric semiconductor substrate covered with a metal layer with consideration of Schottky junction effects
From MaRDI portal
Publication:2109721
Cites work
Cited in
(12)- SH waves in multilayered piezoelectric semiconductor plates with imperfect interfaces
- The propagation of the multi-physical fields coupled Rayleigh wave on the half-space with a gradient piezoelectric semiconductor layer
- Equivalent imperfect interface model of PN junction of piezoelectric semiconductor for the multi-field coupled waves propagation
- Shear horizontal wave in a p-type Si substrate covered with a piezoelectric semiconductor n-type ZnO layer with consideration of PN heterojunction effects
- Analysis and modeling of two-dimensional piezoelectric semiconductor shell theory
- On elastic wave propagation in piezoelectric semiconductors with coupled piezoelectric and semiconductor properties
- Debye screening in surface waves in microstructured semiconductors with drude-modelled carrier transport: a Robin boundary generalization
- Attenuation and amplification of SH waves in a bilayer structure composed of functionally graded viscoelastic material and piezoelectric semiconductor
- Effects of corrugated boundaries on Rayleigh waves in a piezoelectric semiconductor substrate covered with a metal layer
- Effects of Schottky junction on surface waves in a piezoelectric semiconducting film over a metal substrate
- Rotation effects on propagation of shear horizontal surface waves in piezomagnetic-piezoelectric semiconductor layered structures
- Static and dynamic responses of a piezoelectric semiconductor beam under different boundary conditions
This page was built for publication: Shear horizontal wave in a piezoelectric semiconductor substrate covered with a metal layer with consideration of Schottky junction effects
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q2109721)