Shear horizontal wave in a p-type Si substrate covered with a piezoelectric semiconductor n-type ZnO layer with consideration of PN heterojunction effects
From MaRDI portal
Publication:6490792
DOI10.1007/S00707-023-03771-4MaRDI QIDQ6490792FDOQ6490792
Authors: Chunyu Xu, P. J. Wei, Zibo Wei, Xiao Guo
Publication date: 23 April 2024
Published in: Acta Mechanica (Search for Journal in Brave)
Recommendations
- Equivalent imperfect interface model of PN junction of piezoelectric semiconductor for the multi-field coupled waves propagation
- SH waves in multilayered piezoelectric semiconductor plates with imperfect interfaces
- Wave propagation through a piezoelectric semiconductor slab sandwiched by two piezoelectric half-spaces
- Surface electro-elastic shear horizontal waves in a layered structure with a piezoelectric substrate and a hard dielectric layer
- Excitation and propagation of shear horizontal waves in a piezoelectric layer imperfectly bonded to a metal or elastic substrate
Material properties given special treatment (74Exx) Waves in solid mechanics (74Jxx) Coupling of solid mechanics with other effects (74Fxx)
Cites Work
- Wave propagation through a piezoelectric semiconductor slab sandwiched by two piezoelectric half-spaces
- SH waves in multilayered piezoelectric semiconductor plates with imperfect interfaces
- Shear horizontal wave in a piezoelectric semiconductor substrate covered with a metal layer with consideration of Schottky junction effects
- Effects of mechanical loadings on the performance of a piezoelectric hetero-junction
Cited In (2)
This page was built for publication: Shear horizontal wave in a p-type Si substrate covered with a piezoelectric semiconductor n-type ZnO layer with consideration of PN heterojunction effects
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q6490792)