Electronic structure calculations of Si quantum dot: effects of dimer formation and oxidation on electronic and optical properties

DOI10.1016/J.PHYSLETA.2004.02.024MaRDI QIDQ2383239zbMATH OpenOpenAlexFDO

Authors Masahiko Nishida

Publication date 8 October 2007

Published in Physics Letters. A (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.physleta.2004.02.024

zbMATH Keywords

oscillator strengthband-edge statesdimer formation and oxidationSi quantum dot

Mathematics Subject Classification ID

General mathematical topics and methods in quantum theory (81Q99)

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Cited in

(8)

• Quantum-chemistry study of semiconductor systems: the initial oxidation of the (111)Si-H surface
• Modeling and simulations of interface properties with first-principles electronic structure computations
• Mixed silicon-germanium nanocrystals: a detailed study of \(\text{Si}_{x}\text{Ge}_{47-x}:\text H\)
• Optical properties of ultra small Si nanoparticles: Potential role of surface reconstruction and oxygen contamination
• Optical gap and excitation energies of small Ge nanocrystals
• PHOTOIONIZATION CROSS-SECTION AND OSCILLATOR STRENGTH OF HYDROGENIC IMPURITIES IN ZnS/SiO₂ QUANTUM DOTS
• Exciton states and interband transitions in the direct-gap Ge/SiGe quantum dot
• Valence energy level structure of Si\(_{1-x}\)Ge\(_{x}/\)Si quantum disk

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