Exciton states and interband transitions in the direct-gap Ge/SiGe quantum dot

DOI10.1142/S0217984910023219MaRDI QIDQ3573149zbMATH OpenFDO

Authors Congxin Xia, Yaming Liu, Shuyi Wei

Publication date 30 June 2010

Published in Modern Physics Letters B (Search for Journal in Brave)

zbMATH Keywords

semiconductorquantum structuresexcitonimpurity

Mathematics Subject Classification ID

Quantum dots, waveguides, ratchets, etc. (81Q37) Statistical mechanics of semiconductors (82D37)

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(5)

• Electronic structure calculations of Si quantum dot: effects of dimer formation and oxidation on electronic and optical properties
• Exciton stability and luminescence in InN/(In,Ga)N quantum dots under size and shell content effects
• Optical gap and excitation energies of small Ge nanocrystals
• Valence energy level structure of Si\(_{1-x}\)Ge\(_{x}/\)Si quantum disk
• Theoretical and experimental Raman study of superlattices with Ge/Si quantum dots

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