Exciton states and interband transitions in the direct-gap Ge/SiGe quantum dot

DOI10.1142/S0217984910023219zbMATH Open1191.82118MaRDI QIDQ3573149FDOQ3573149

Shuyi Wei, Yaming Liu, Congxin Xia

Publication date: 30 June 2010

Published in: Modern Physics Letters B (Search for Journal in Brave)

Recommendations

• Exciton states in a quantum dot with parabolic confinement
• Exciton and biexciton binding and vertical Stark effect in a model Lens-shaped quantum box: application to InAs/InP quantum dots
• Binding energy and radiative lifetime of an exciton in a type-II quantum well
• Exciton stability and luminescence in InN/(In,Ga)N quantum dots under size and shell content effects
• Electronic structure calculations of Si quantum dot: effects of dimer formation and oxidation on electronic and optical properties

zbMATH Keywords

semiconductorquantum structuresexcitonimpurity

Mathematics Subject Classification ID

Quantum dots, waveguides, ratchets, etc. (81Q37) Statistical mechanics of semiconductors (82D37)

Cited In (4)

• Theoretical and experimental Raman study of superlattices with Ge/Si quantum dots
• Valence energy level structure of Si\(_{1-x}\)Ge\(_{x}/\)Si quantum disk
• Electronic structure calculations of Si quantum dot: effects of dimer formation and oxidation on electronic and optical properties
• Optical gap and excitation energies of small Ge nanocrystals

This page was built for publication: Exciton states and interband transitions in the direct-gap Ge/SiGe quantum dot

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q3573149)