Binding energy and radiative lifetime of an exciton in a type-II quantum well

DOI10.1088/0031-8949/85/01/015704MaRDI QIDQ4918521zbMATH OpenOpenAlexFDO

Authors A. John Peter, Chang Woo Lee

Publication date 25 April 2013

Published in Physica Scripta (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1088/0031-8949/85/01/015704

zbMATH Keywords

semiconductorsquantum wellopto-electronic devices

Mathematics Subject Classification ID

Statistical mechanics of solids (82D20) Statistical mechanics of semiconductors (82D37)

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Cited in

(11)

• Hidden symmetry, excitonic transitions and two-dimensional Kane's exciton in the quantum well
• VARIATIONAL CALCULATIONS OF CHARGED EXCITONS IN GaAs QUANTUM-WELL WIRES
• AB-INITIO STUDY ON THE EXCITON BINDING ENERGIES IN ORGANIC SEMICONDUCTORS
• THEORY OF INTERFACE EXCITON WITH A HOLE CONFINED IN A QUANTUM WELL
• Exciton states and interband transitions in the direct-gap Ge/SiGe quantum dot
• LASER INDUCED METAL INSULATOR TRANSITION THROUGH EXCITON MECHANISM IN QUANTUM WELL SYSTEMS
• EFFECTIVE MASSES FOR DONOR BINDING ENERGIES IN QUANTUM WELL SYSTEMS
• Energy levels of excitons in square quantum wells
• Variational methods for calculating exciton binding energies in quantum well structures
• Localized Wannier exciton in defect layer embedded between two semi-infinite superlattices
• Band hybridization effect in InAs/GaSb based quantum wells

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