Binding energy and radiative lifetime of an exciton in a type-II quantum well
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Publication:4918521
DOI10.1088/0031-8949/85/01/015704zbMATH Open1267.82130OpenAlexW2007099850MaRDI QIDQ4918521FDOQ4918521
Authors: A. John Peter, Chang Woo Lee 
Publication date: 25 April 2013
Published in: Physica Scripta (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1088/0031-8949/85/01/015704
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Cited In (11)
- EFFECTIVE MASSES FOR DONOR BINDING ENERGIES IN QUANTUM WELL SYSTEMS
- Localized Wannier exciton in defect layer embedded between two semi-infinite superlattices
- LASER INDUCED METAL INSULATOR TRANSITION THROUGH EXCITON MECHANISM IN QUANTUM WELL SYSTEMS
- Variational methods for calculating exciton binding energies in quantum well structures
- AB-INITIO STUDY ON THE EXCITON BINDING ENERGIES IN ORGANIC SEMICONDUCTORS
- Exciton states and interband transitions in the direct-gap Ge/SiGe quantum dot
- VARIATIONAL CALCULATIONS OF CHARGED EXCITONS IN GaAs QUANTUM-WELL WIRES
- Hidden symmetry, excitonic transitions and two-dimensional Kane's exciton in the quantum well
- Band hybridization effect in InAs/GaSb based quantum wells
- Energy levels of excitons in square quantum wells
- THEORY OF INTERFACE EXCITON WITH A HOLE CONFINED IN A QUANTUM WELL
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