VARIATIONAL CALCULATIONS OF CHARGED EXCITONS IN GaAs QUANTUM-WELL WIRES
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Publication:5485729
DOI10.1142/S0217984906010962zbMATH Open1097.82567OpenAlexW2071491318MaRDI QIDQ5485729FDOQ5485729
Authors: Yanxiu Sun, Jian-Jun Liu 
Publication date: 4 September 2006
Published in: Modern Physics Letters B (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1142/s0217984906010962
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Cited In (12)
- Localized Wannier exciton in defect layer embedded between two semi-infinite superlattices
- Dimensional and correlation effects of charged excitons in low-dimensional semiconductors
- Variational methods for calculating exciton binding energies in quantum well structures
- Binding energy and radiative lifetime of an exciton in a type-II quantum well
- Exciton states and optical absorption in quantum wires under laser radiation
- Variational computations for excitons in quantum dots: a quantum Monte Carlo study
- Excitonic eigenstates of disordered semiconductor quantum wires: adaptive wavelet computation of eigenvalues for the electron-hole Schrödinger equation
- Energy levels of excitons in square quantum wells
- An exact and compact formula for the optical intersubband response of finite-barrier quantum wells, wires and dots
- A quasiparticle calculation of the dispersion curves of gallium arsenide based on a full Hartree-Fock approximation
- CHALLENGES IN APPLICATION OF A MONTE CARLO METHOD TO STUDY AN EXCITON CONFINED IN AlGaAs/GaAs SINGLE QUANTUM WELL
- THEORY OF INTERFACE EXCITON WITH A HOLE CONFINED IN A QUANTUM WELL
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