Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator

DOI10.1007/978-3-030-10692-8_30OpenAlexW2910623652MaRDI QIDQ2420060FDOQ2420060

Authors: Cristina Medina-Bailon, Toufik Sadi, Carlos Sampedro, Jose Luis Padilla, Luca Donetti, Vihar Georgiev, Francisco Gámiz, Asen Asenov 

Publication date: 5 June 2019

Full work available at URL: http://eprints.gla.ac.uk/178378/2/178378.pdf

zbMATH Keywords

direct tunnelingFDSOIgate leakage mechanismMS-EMCtrap assisted tunneling

Mathematics Subject Classification ID

Numerical analysis (65-XX)

Cited In (2)

• Kinetic Monte Carlo Analysis of the Operation and Reliability of Oxide Based RRAMs
• Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap

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