Initial boundary value problems for a quantum hydrodynamic model of semiconductors: asymptotic behaviors and classical limits
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Cites work
- A note on boundary conditions for quantum hydrodynamic equations
- Asymptotic behaviour of solutions of the hydrodynamic model of semiconductors
- Asymptotic stability of a stationary solution to a hydrodynamic model of semiconductors
- scientific article; zbMATH DE number 42636 (Why is no real title available?)
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- scientific article; zbMATH DE number 1390187 (Why is no real title available?)
- Infinite-dimensional dynamical systems in mechanics and physics
- Large-time behavior of solutions to hyperbolic-elliptic coupled systems
- On a one-dimensional steady-state hydrodynamic model for semiconductors
- Quantum Euler-Poisson systems: existence of stationary states.
- Quantum Euler-Poisson systems: global existence and exponential decay
- Stability of semiconductor states with insulating and contact boundary conditions
- The Quantum Hydrodynamic Model for Semiconductor Devices
Cited in
(33)- Asymptotic stability of a stationary solution to a thermal hydrodynamic model for semiconductors
- Global existence of solutions to one-dimensional viscous quantum hydrodynamic equations
- Blow-up of spherically symmetric smooth solutions to quantum hydrodynamic models
- Remarks on blow-up of the smooth solution to quantum hydrodynamic models in \(\mathbb {R}^{d}\)
- A note on boundary conditions for quantum hydrodynamic equations
- The existence, uniqueness and exponential decay of global solutions in the full quantum hydrodynamic equations for semiconductors
- Asymptotic stability of a stationary solution for the bipolar full Euler-Poisson equation in a bounded domain
- Large-time behavior of solutions to the bipolar quantum Euler-Poisson system with critical time-dependent over-damping
- A blow-up criterion of strong solutions to the quantum hydrodynamic model
- The stationary solution of a one-dimensional bipolar quantum hydrodynamic model
- Global solutions for the compressible quantum hydrodynamic model in a bounded domain
- Global existence and asymptotic behavior of smooth solutions to a bipolar Euler-Poisson equation in a bound domain
- Asymptotic stability of the rarefaction wave for the compressible quantum Navier-Stokes-Poisson equations
- Blow-up of the smooth solution to the IBVP of three-dimensional quantum hydrodynamic models
- Global existence and large time behavior of solutions for the bipolar quantum hydrodynamic models in the quarter plane
- Quantum semiconductor models
- Stationary solutions to hybrid quantum hydrodynamical model of semiconductors in bounded domain
- The classical limit to a bipolar quantum hydrodynamic model of semiconductors in a bounded domain
- Asymptotic stability and semi-classical limit for bipolar quantum hydrodynamic model
- Asymptotic behaviors and classical limits of solutions to a quantum drift-diffusion model for semiconductors
- Existence of solutions for a viscous hybrid quantum system for arbitrary large current density
- Stationary solutions for a new hybrid quantum model for semiconductors with discontinuous pressure functional and relaxation time
- Stationary solution for transient quantum hydrodynamics with Bohmenian-type boundary conditions
- Thermal equilibrium solution to new model of bipolar hybrid quantum hydrodynamics
- Quasineutral limit of bipolar quantum hydrodynamic model for semiconductors
- Remarks on the derivation of finite energy weak solutions to the QHD system
- Semiconductor full quantum hydrodynamic model with non-flat doping profile: (II) semi-classical limit
- Existence and uniqueness of steady states to semiconductor bipolar full quantum hydrodynamic model
- Relaxation-time limits of global solutions in full quantum hydrodynamic model for semiconductors.
- Long-time self-similarity of classical solutions to the bipolar quantum hydrodynamic models
- Stationary solutions to a hybrid viscous hydrodynamic model with classical boundaries
- Energy cascade and Sobolev norms inflation for the quantum Euler equations on tori
- Relaxation limit and initial layer to hydrodynamic models for semiconductors
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