Anti-bias voltage electron-Kondo transport in a quantum dot device driven by a graphene sheet

DOI10.1016/J.PHYSLETA.2014.11.011zbMATH Open1304.81162OpenAlexW1985044958MaRDI QIDQ2514367FDOQ2514367

Authors: Xiong-Wen Chen, Zhen-Gang Shi, Shunru Zhang, Ke-Hui Song, Guanghui Zhou 

Publication date: 3 February 2015

Published in: Physics Letters. A (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.physleta.2014.11.011

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zbMATH Keywords

quantum dotgraphene sheetKondo effecthigh-conductance transport

Mathematics Subject Classification ID

Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of nanostructures and nanoparticles (82D80) Quantum dots as quasi particles (81V65)

Cited In (1)

• Edge channel confinement in a bilayer graphene \(n\)-\(p\)-\(n\) quantum dot

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