Theory of Fano–Kondo Effect of Transport Properties through Quantum Dots
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Publication:4669503
DOI10.1143/JPSJ.73.3239zbMATH Open1075.82534arXivcond-mat/0410061MaRDI QIDQ4669503FDOQ4669503
Authors: Isao Maruyama, Naokazu Shibata, Kazuo Ueda
Publication date: 15 April 2005
Published in: Journal of the Physical Society of Japan (Search for Journal in Brave)
Abstract: The Fano-Kondo effect in zero-bias conductance is investigated based on a theoretical model for the T-shaped quantum dot. The conductance as a function of the gate voltage is generally characterized by a Fano asymmetric parameter q. With varying temperature the conductance shows a crossover between the high and low temperature regions compared with the Kondo temperature T_K: two Fano asymmetric peaks at high temperatures and the Fano-Kondo plateau inside a Fano peak at low temperatures. Temperature dependence of conductance is calculated numerically by the Finite temperature density matrix renormalization group method (FT-DMRG).
Full work available at URL: https://arxiv.org/abs/cond-mat/0410061
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Cited In (11)
- Transport through a Kondo quantum dot: functional RG approach
- Power-law behavior in electron transport through a quantum dot with Luttinger liquid leads
- Heat generation by electrical current in quantum dot system with Fano resonance
- Mesoscopic fluctuations of co-tunneling and Kondo effect in quantum dots
- Scanning tunneling electron transport into a Kondo lattice
- Enhancement of Kondo Effect in Multilevel Quantum Dots
- Kondo-Fano effect in T-shaped double quantum dots coupled to ferromagnetic leads
- Thermopower of a multilevel quantum dot coupled with leads in Coulomb blockade
- Anti-bias voltage electron-Kondo transport in a quantum dot device driven by a graphene sheet
- Fermi edge singularities in transport through lateral GaAs quantum dots
- Influences of a side-coupled triple quantum dot on Kondo transport through a quantum dot
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