Theory of Fano–Kondo Effect of Transport Properties through Quantum Dots

From MaRDI portal
Publication:4669503

DOI10.1143/JPSJ.73.3239zbMATH Open1075.82534arXivcond-mat/0410061MaRDI QIDQ4669503FDOQ4669503


Authors: Isao Maruyama, Naokazu Shibata, Kazuo Ueda Edit this on Wikidata


Publication date: 15 April 2005

Published in: Journal of the Physical Society of Japan (Search for Journal in Brave)

Abstract: The Fano-Kondo effect in zero-bias conductance is investigated based on a theoretical model for the T-shaped quantum dot. The conductance as a function of the gate voltage is generally characterized by a Fano asymmetric parameter q. With varying temperature the conductance shows a crossover between the high and low temperature regions compared with the Kondo temperature T_K: two Fano asymmetric peaks at high temperatures and the Fano-Kondo plateau inside a Fano peak at low temperatures. Temperature dependence of conductance is calculated numerically by the Finite temperature density matrix renormalization group method (FT-DMRG).


Full work available at URL: https://arxiv.org/abs/cond-mat/0410061




Recommendations





Cited In (11)





This page was built for publication: Theory of Fano–Kondo Effect of Transport Properties through Quantum Dots

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q4669503)