The choice of the pressure of the gas flow and the melt level in silicon tube growth
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Publication:2882840
zbMATH Open1247.80010MaRDI QIDQ2882840FDOQ2882840
Authors: Stefan Balint, Loredana Tanasie 
Publication date: 8 May 2012
Published in: Mathematics in Engineering, Science and Aerospace MESA (Search for Journal in Brave)
Full work available at URL: http://nonlinearstudies.com/index.php/mesa/article/view/663/429
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- Some problems concerning the evaluation of the shape and size of the meniscus occurring in silicon tube growth
- Pressure difference across the free surface of a stable convex meniscus in a possible \(\mathrm{Ge}_{1-x}\mathrm{Si}_x\) tube growth by edge-defined film-fed growth (EFG) technique
- Control procedure for the shape of a Nd:YAG cylindrical bar created by edge-defined film-fed growth as a function of pressure
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- Inequalities for single crystal rod growth by edge-defined film-fed growth (E.F.G.) technique
- Capillary mechanism effect in the processing of a semiconductor single crystal rod with specified constant radius
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