The choice of the pressure of the gas flow and the melt level in silicon tube growth (Q2882840)

This work concerns the technology for growing single-crystals with prescribed shapes and sizes that are used in radiation detection, micro-electronic applications, and other fields.NEWLINENEWLINEThe authors show in this paper that a stable and convex meniscus for the growth of a single crystal silicon tube with specified inner and outer radii can be created by appropriate choices of the pressure of the gas flow in the furnace and melt column height between the horizontal crucible melt level and the shaper top level. They consider a system of differential equations which govern the evolution of the tube inner and outer radii, and the level of the crystallization front. Numerical examples for small diameter Si tubes are used to demonstrate that the explicit formulas established theoretically can be used for creating an appropriate meniscus. Next, the authors outline the procedure for creating an appropriate meniscus for the growth of a tube with large diameter and include some numerical examples. The authors also draw the conclusion that the value of the difference between inner and outer top level of the shaper or the pressure in the inner and outer gas flows depend on the shaper radii. This dependence is so strong that variations of order \(10^{-3}\)[m] of the radii influence the shape of the meniscus free surface.