Study of defect-layers effect in ferroelectric thin film with transverse Ising model

DOI10.1088/0253-6102/56/6/15zbMATH Open1247.82101OpenAlexW1580241352MaRDI QIDQ2913490FDOQ2913490

Authors: Chun-Dong Wang, Bao-Hua Teng, So-Ying Kwok, Zhen-Zhen Lu, Muk-Fung Yuen 

Publication date: 26 September 2012

Published in: Communications in Theoretical Physics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1088/0253-6102/56/6/15

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zbMATH Keywords

phase transitionsferroelectricsdefect-layer

Mathematics Subject Classification ID

Lattice systems (Ising, dimer, Potts, etc.) and systems on graphs arising in equilibrium statistical mechanics (82B20) Critical phenomena in equilibrium statistical mechanics (82B27) Fundamental solutions, Green's function methods, etc. for initial value and initial-boundary value problems involving PDEs (65M80) Statistical mechanics of ferroelectrics (82D45)

Cited In (8)

• Influence of layer defects on the dynamical properties of ferromagnetic semiconducting thin films
• Ion doping effects on the dielectric and phonon properties of (Ba, Sr)TiO\(_3\) thin films
• Study of phase transition properties in epitaxial ferroelectric film
• The ferroelectric properties of films with defect layers
• Effects of surface modification on the critical behaviour in multiple-surface-layer ferroelectric thin~films
• PHASE TRANSITION PROPERTIES OF FERROELECTRIC THIN FILM WITH ONE DISTINCT INSERTING-LAYER
• Effects of interface dislocations on properties of ferroelectric thin films
• Pyroelectric, dielectric properties and hysteresis loops of a ferroelectric bilayer system described by the transverse Ising model with long-range interactions

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