Effects of interface dislocations on properties of ferroelectric thin films

DOI10.1016/J.JMPS.2007.01.011MaRDI QIDQ1019364zbMATH OpenOpenAlexFDO

Authors Yue Zheng, Biao Wang, C. H. Woo

Publication date 2 June 2009

Published in Journal of the Mechanics and Physics of Solids (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.jmps.2007.01.011

zbMATH Keywords

coercive fieldferroelectric thin filminterface dislocationsremnant polarizationself polarization

Mathematics Subject Classification ID

Electromagnetic effects in solid mechanics (74F15) Thin films (74K35) Finite difference methods applied to problems in solid mechanics (74S20)

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Cites work

• Dislocation Dynamics at Low Temperatures

Cited in

(6)

• On the theory of thermodynamic properties of geometrically confined disordered ferroelectrics
• Ferroelectric Hysteresis Loops as the Manifestation of Interface-aided Polarization Reversals in Heterostructures
• Position-thickness-dependent stresses and stress-induced diffuse dielectric anomaly in perovskite ferroelectric films
• Utilizing mechanical loads and flexoelectricity to induce and control complicated evolution of domain patterns in ferroelectric nanofilms
• Toughening effect of ferroelectric ceramics induced by domain switching and dislocations
• Effects of thickness on the polarization states in epitaxial ferroelectric thin films

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