Unfolding the Threshold Switching Behavior of a Memristor

DOI10.1007/978-3-319-08672-9_20MaRDI QIDQ2925199zbMATHOpenAlexFDO

Authors Stefan Slesazeck, Alon Ascoli, Hannes Mähne, Ronald Tetzlaff, Thomas Mikolajick

Publication date 21 October 2014

Published in Nonlinear Dynamics of Electronic Systems (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1007/978-3-319-08672-9_20

zbMATH Keywords

memristornonlinear dynamicsunfolding theoremlocal activitythreshold switching

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) System identification (93B30) Analytic circuit theory (94C05) Optimization problems in optics and electromagnetic theory (78M50)

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Cited in

(13)

• Complex dynamics of a bi-directional N-type locally-active memristor
• Locally active memristor with three coexisting pinched hysteresis loops and its emulator circuit
• Deterministic modeling of the diffusive memristor
• Revisiting Memristor Properties
• Noise on resistive switching: a Fokker-Planck approach
• Dynamics of a bistable current-controlled locally-active memristor
• Coexisting hidden and self-excited attractors in a locally active memristor-based circuit
• Local-Activity and Simultaneous Zero-Hopf Bifurcations Leading to Multistability in a Memristive Circuit
• A cubic memristive system with two twin Rössler-type chaotic attractors symmetrical about an invariant plane
• Simulating resistance switching in amorphous carbon
• General modeling method of threshold-type multivalued memristor and its application in digital logic circuits
• Resistive switching effects in \(\mathrm{CeO}_2/\mathrm{La}_{0.7}(\mathrm{Sr}_{0.1}\mathrm{Ca}_{0.9})_{0.3}\mathrm{MnO}_3/\mathrm{Pt}\) heterostructures prepared by pulse laser deposition method
• Switching characteristics of a locally-active memristor with binary memories

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