Unfolding the Threshold Switching Behavior of a Memristor
DOI10.1007/978-3-319-08672-9_20zbMATH Open1297.78013OpenAlexW153683814MaRDI QIDQ2925199FDOQ2925199
Authors: Stefan Slesazeck, Alon Ascoli, Hannes Mähne, Ronald Tetzlaff, Thomas Mikolajick 
Publication date: 21 October 2014
Published in: Nonlinear Dynamics of Electronic Systems (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/978-3-319-08672-9_20
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Technical applications of optics and electromagnetic theory (78A55) System identification (93B30) Analytic circuit theory (94C05) Optimization problems in optics and electromagnetic theory (78M50)
Cited In (13)
- Switching characteristics of a locally-active memristor with binary memories
- Locally active memristor with three coexisting pinched hysteresis loops and its emulator circuit
- Coexisting hidden and self-excited attractors in a locally active memristor-based circuit
- General modeling method of threshold-type multivalued memristor and its application in digital logic circuits
- Simulating resistance switching in amorphous carbon
- Deterministic modeling of the diffusive memristor
- Noise on resistive switching: a Fokker-Planck approach
- Local-Activity and Simultaneous Zero-Hopf Bifurcations Leading to Multistability in a Memristive Circuit
- Revisiting Memristor Properties
- Complex dynamics of a bi-directional N-type locally-active memristor
- Dynamics of a bistable current-controlled locally-active memristor
- A cubic memristive system with two twin Rössler-type chaotic attractors symmetrical about an invariant plane
- Resistive switching effects in \(\mathrm{CeO}_2/\mathrm{La}_{0.7}(\mathrm{Sr}_{0.1}\mathrm{Ca}_{0.9})_{0.3}\mathrm{MnO}_3/\mathrm{Pt}\) heterostructures prepared by pulse laser deposition method
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