Resistive switching effects in CeO₂/La₀.7(Sr₀.1Ca₀.9)_0.3MnO₃/Pt heterostructures prepared by pulse laser deposition method

DOI10.1016/J.PHYSLETA.2014.06.045zbMATH Open1306.78008OpenAlexW2157176946MaRDI QIDQ480217FDOQ480217

Authors: Yong-Cai Geng, Sumit K. Garg 

Publication date: 8 December 2014

Published in: Physics Letters. A (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.physleta.2014.06.045

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zbMATH Keywords

junctionresistive switching

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55)

Cited In (2)

• NOVEL PROPERTIES IN OXIDE HETEROSTRUCTURES
• Frequency dependence of the resistive switching effect in Bi\(_{2}\)Sr\(_{2}\)CaCu\(_{2}\)O\(_{8+y}\)/Ag film heterocontacts

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