A novel investigation on using strain in barriers of 1.3 AlGaInAs-InP uncooled multiple quantum well lasers
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Publication:3010158
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(2)- Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range
- A study of the operating parameters and barrier thickness of \(\text{Al}_{0.08}\text{In}_{0.08}\text{Ga}_{0.84}\text{N}/\text{Al}_{x}\text{In}_{y}\text{Ga}_{1-x-y}\text{N}\) double quantum well laser diodes
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