Finite volume element methods and analysis along characteristics for the one dimensional cubic semiconductor device simulation

MaRDI QIDQ3371087zbMATH OpenFDO

Authors Chuanjun Chen, Yirang Yuan

Publication date 21 February 2006

zbMATH Keywords

numerical exampleserror estimatesmethod of characteristicsfinite volume element methodsemiconductor device simulation

Mathematics Subject Classification ID

Error bounds for initial value and initial-boundary value problems involving PDEs (65M15) Numerical aspects of the method of characteristics for initial value and initial-boundary value problems involving PDEs (65M25) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Statistical mechanics of semiconductors (82D37)

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(3)

• Finite volume element method along characteristics for the one dimension semiconductor device
• The characteristic finite volume element method for 1-D semiconductor device simulation
• Upwind finite volume element methods for one-dimensional semiconductor device

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