Finite volume element methods and analysis along characteristics for the one dimensional cubic semiconductor device simulation

zbMATH Open1153.65095MaRDI QIDQ3371087FDOQ3371087

Authors: Chuanjun Chen, Yirang Yuan 

Publication date: 21 February 2006

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zbMATH Keywords

numerical exampleserror estimatesmethod of characteristicsfinite volume element methodsemiconductor device simulation

Mathematics Subject Classification ID

Error bounds for initial value and initial-boundary value problems involving PDEs (65M15) Numerical aspects of the method of characteristics for initial value and initial-boundary value problems involving PDEs (65M25) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Statistical mechanics of semiconductors (82D37)

Cited In (3)

• Finite volume element method along characteristics for the one dimension semiconductor device
• The characteristic finite volume element method for 1-D semiconductor device simulation
• Upwind finite volume element methods for one-dimensional semiconductor device

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