An efficient neural network approach for nanoscale FinFET modelling and circuit simulation
From MaRDI portal
Publication:3399231
Recommendations
- scientific article; zbMATH DE number 1859689
- Signal–noise neural network model for active microwave devices
- Neural network-based design approach for submicron MOS integrated circuits
- scientific article; zbMATH DE number 1843093
- Deviation-tolerant floating gate structures as a way to design an on-chip learning neural networks
This page was built for publication: An efficient neural network approach for nanoscale FinFET modelling and circuit simulation
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q3399231)