Neural network-based design approach for submicron MOS integrated circuits

DOI10.1016/J.MATCOM.2007.10.012MaRDI QIDQ1010037zbMATH OpenOpenAlexFDO

Authors J. Martínez

Publication date 3 April 2009

Published in Mathematics and Computers in Simulation (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.matcom.2007.10.012

zbMATH Keywords

neural networksmultilayer perceptronanalog integrated circuit designaspect ratio determinationMOSFET modeling

Mathematics Subject Classification ID

Learning and adaptive systems in artificial intelligence (68T05) Statistical mechanics of semiconductors (82D37)

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Cites work

• Signal–noise neural network model for active microwave devices

Cited in

(4)

• An efficient neural network approach for nanoscale FinFET modelling and circuit simulation
• Neural network reinforced point defect concentration estimation model for Czochralski-grown silicon crystals
• scientific article; zbMATH DE number 1859689 (Why is no real title available?)
• scientific article; zbMATH DE number 5661217 (Why is no real title available?)

Describes a project that uses

Uses Software

• Matlab

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