Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions

DOI10.1002/JNM.737MaRDI QIDQ3585572zbMATH OpenOpenAlexFDO

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Publication date 20 August 2010

Published in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1002/jnm.737

zbMATH Keywords

diffusionmobilitydefectsprocess simulationelectrical activationelectronic devicesdopantssheet resistance

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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• ANALYSIS OF REDISTRIBUTION OF RADIATION DEFECTS TAKING INTO ACCOUNT DIFFUSION AND SEVERAL SECONDARY PROCESSES

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