Grown-in defects of InSb crystals: Models and computation.

zbMATH Open1114.76374MaRDI QIDQ3593751FDOQ3593751

Authors: Naveen K. Vaidya, Dong Liang, Huaxiong Huang 

Publication date: 6 August 2007

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zbMATH Keywords

finite difference methodrecombinationcrystal growthpoint defectsthermal fluxCzochralski technique

Mathematics Subject Classification ID

Finite difference methods applied to problems in fluid mechanics (76M20) Diffusion (76R50) Stefan problems, phase changes, etc. (80A22) Multiphase and multicomponent flows (76T99)

Cited In (2)

• Neural network reinforced point defect concentration estimation model for Czochralski-grown silicon crystals
• A program package for point defects modelling in semiconductor crystals

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