THE IMPORTANCE OF Fe SURFACE STATES FOR MAGNETIC TUNNEL JUNCTION BASED SPINTRONIC DEVICES

DOI10.1142/S0217984908017060zbMATH Open1156.82410OpenAlexW2124869747MaRDI QIDQ3597433FDOQ3597433

Authors: Athanasion N. Chantis, Kirill D. Belashchenko, Evgeny Y. Tsymbal 

Publication date: 9 February 2009

Published in: Modern Physics Letters B (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1142/s0217984908017060

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zbMATH Keywords

spintronicsspin polarized transport in semiconductorselectrical injection of spin polarized carriersfirst principles electron transport methodsmagnetic tunnel junctionsmetal-semiconductor-metal structuresRashba splittingspin transport through interfacestunneling anisotropic magnetoressistance

Mathematics Subject Classification ID

Statistical mechanics of magnetic materials (82D40) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37)

Cited In (3)

• Voltage induced torque in magnetic tunnel junctions
• Electrically controlled positive and negative magnetoresistance in ferromagnetic \(\mathrm{WSe}_2\) junction
• Complex Band Structures of Spintronics Materials

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