THE IMPORTANCE OF Fe SURFACE STATES FOR MAGNETIC TUNNEL JUNCTION BASED SPINTRONIC DEVICES

DOI10.1142/S0217984908017060MaRDI QIDQ3597433zbMATH OpenOpenAlexFDO

Authors Athanasion N. Chantis, Kirill D. Belashchenko, Evgeny Y. Tsymbal

Publication date 9 February 2009

Published in Modern Physics Letters B (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1142/s0217984908017060

zbMATH Keywords

spintronicsspin polarized transport in semiconductorselectrical injection of spin polarized carriersfirst principles electron transport methodsmagnetic tunnel junctionsmetal-semiconductor-metal structuresRashba splittingspin transport through interfacestunneling anisotropic magnetoressistance

Mathematics Subject Classification ID

Statistical mechanics of magnetic materials (82D40) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37)

Recommendations

• Spin-polarized transport in structures with tunnel barriers
• SPIN POLARIZATION AND TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC/SEMICONDUCTOR/FERROMAGNETIC HETEROSTRUCTURE
• TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC SEMICONDUCTOR TUNNEL JUNCTIONS
• Electrical control of valley and spin polarized current and tunneling magnetoresistance in a silicene-based magnetic tunnel junction
• Large oscillating tunnel magnetoresistance in ferromagnetic graphene single tunnel junction

Cited in

(3)

• Complex Band Structures of Spintronics Materials
• Voltage induced torque in magnetic tunnel junctions
• Electrically controlled positive and negative magnetoresistance in ferromagnetic \(\mathrm{WSe}_2\) junction

This page was built for publication: THE IMPORTANCE OF Fe SURFACE STATES FOR MAGNETIC TUNNEL JUNCTION BASED SPINTRONIC DEVICES

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q3597433)