Electrical control of valley and spin polarized current and tunneling magnetoresistance in a silicene-based magnetic tunnel junction

DOI10.1016/J.PHYSLETA.2014.06.044MaRDI QIDQ480216zbMATH OpenOpenAlexFDO

Authors Dali Wang, Guojun Jin

Publication date 8 December 2014

Published in Physics Letters. A (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.physleta.2014.06.044

zbMATH Keywords

spin polarizationmagnetic tunnel junctionsilicenevalley polarizationvertical electric field

Mathematics Subject Classification ID

Motion of charged particles (78A35) Statistical mechanics of magnetic materials (82D40) Transport processes in time-dependent statistical mechanics (82C70)

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(9)

• Large oscillating tunnel magnetoresistance in ferromagnetic graphene single tunnel junction
• Voltage induced torque in magnetic tunnel junctions
• Controllable spin transport in dual-gated silicene
• Transport properties of ferromagnetic silicene superlattice-based nanostructure
• Nonlocal transport in Fibonacci superconducting silicene superlattices
• Robust and controllable electronic local transports in armchair silicene nanoribbons under a perpendicular electric field
• THE IMPORTANCE OF Fe SURFACE STATES FOR MAGNETIC TUNNEL JUNCTION BASED SPINTRONIC DEVICES
• Electric field tunable spin polarization in functionalized silicene
• Electrically controlled positive and negative magnetoresistance in ferromagnetic \(\mathrm{WSe}_2\) junction

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