Electrical control of valley and spin polarized current and tunneling magnetoresistance in a silicene-based magnetic tunnel junction

DOI10.1016/J.PHYSLETA.2014.06.044zbMATH Open1305.82061OpenAlexW2163188650MaRDI QIDQ480216FDOQ480216

Authors: Dali Wang, Guojun Jin 

Publication date: 8 December 2014

Published in: Physics Letters. A (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.physleta.2014.06.044

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zbMATH Keywords

spin polarizationmagnetic tunnel junctionsilicenevalley polarizationvertical electric field

Mathematics Subject Classification ID

Motion of charged particles (78A35) Statistical mechanics of magnetic materials (82D40) Transport processes in time-dependent statistical mechanics (82C70)

Cited In (9)

• Large oscillating tunnel magnetoresistance in ferromagnetic graphene single tunnel junction
• Voltage induced torque in magnetic tunnel junctions
• Controllable spin transport in dual-gated silicene
• Transport properties of ferromagnetic silicene superlattice-based nanostructure
• Nonlocal transport in Fibonacci superconducting silicene superlattices
• Robust and controllable electronic local transports in armchair silicene nanoribbons under a perpendicular electric field
• THE IMPORTANCE OF Fe SURFACE STATES FOR MAGNETIC TUNNEL JUNCTION BASED SPINTRONIC DEVICES
• Electric field tunable spin polarization in functionalized silicene
• Electrically controlled positive and negative magnetoresistance in ferromagnetic \(\mathrm{WSe}_2\) junction

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