A COMPARISON OF VARIOUS DISCRETIZATION SCHEMES FOR THE STATIONARY SEMICONDUCTOR DEVICE CONTINUITY EQUATION

DOI10.1108/EB010319zbMATH Open0674.65091OpenAlexW1999801782MaRDI QIDQ3829017FDOQ3829017

Authors: H. Schwarzenbach, Heinz Ungricht 

Publication date: 1988

Published in: COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb010319

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zbMATH Keywords

finite element methodcomparison of methodsScharfetter-Gummel approximationsemiconductor device nonlinear equation

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Applications to the sciences (65Z05)

Cites Work

• Title not available (Why is that?)

Cited In (11)

• Continuation methods in semiconductor device simulation
• Numerical simulation of nonlinear processes in semiconductor devices with the application of the Newton's method for linearization
• A NECESSARY CONDITION ON DISCRETIZATION SCHEMES FOR DEVICE SIMULATION
• Title not available (Why is that?)
• An analysis of the Scharfetter-Gummel box method for the stationary semiconductor device equations
• Computational and analytical comparison of flux discretizations for the semiconductor device equations beyond Boltzmann statistics
• On the inclusion of the recombination term in discretizations of the semiconductor device equations
• Title not available (Why is that?)
• Local discontinuous Galerkin methods for moment models in device simulations: Performance assessment and two-dimensional results
• Numerical solution of drift diffusion equations using 2D finite difference method: application to a strained MOSFET device
• Convergence of a second-order accurate Petrov-Galerkin scheme for convection-diffusion problems in semiconductors

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