Continuation methods in semiconductor device simulation

DOI10.1016/0377-0427(89)90147-7MaRDI QIDQ1119373zbMATH OpenOpenAlexFDO

Authors W. M. jun. Coughran, Maria Rosário Pinto, R. Kent Smith

Publication date 1989

Published in Journal of Computational and Applied Mathematics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/0377-0427(89)90147-7

zbMATH Keywords

semiconductor devicesPredictor-corrector continuation methods

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Partial differential equations of mathematical physics and other areas of application (35Q99) Applications to the sciences (65Z05)

Recommendations

• scientific article; zbMATH DE number 4048978
• Perspectives in semiconductor device simulation
• Domain decomposition technique for the continuity equations of semiconductor device models
• scientific article; zbMATH DE number 4078728
• scientific article; zbMATH DE number 3890680
• Numerical simulation of semiconductor devices
• ADVANCED NUMERICAL TECHNIQUES IN SEMICONDUCTOR DEVICE SIMULATION
• A COMPARISON OF VARIOUS DISCRETIZATION SCHEMES FOR THE STATIONARY SEMICONDUCTOR DEVICE CONTINUITY EQUATION
• scientific article; zbMATH DE number 4110040
• Simulation of semiconductor devices with a local numerical approach

Cites work

• scientific article; zbMATH DE number 3844984 (Why is no real title available?)
• scientific article; zbMATH DE number 3930251 (Why is no real title available?)
• scientific article; zbMATH DE number 3978315 (Why is no real title available?)
• scientific article; zbMATH DE number 4005515 (Why is no real title available?)
• scientific article; zbMATH DE number 4110040 (Why is no real title available?)
• An adaptive, multi-level method for elliptic boundary value problems
• Computation of Current-Voltage Characteristics in a Semiconductor Device using Arc-length Continuation
• Deflation Techniques and Block-Elimination Algorithms for Solving Bordered Singular Systems
• Ein lokal überlinear konvergentes Verfahren zur Bestimmung von Rückkehrpunkten implizit definierter Raumkurven
• Global approximate Newton methods
• Numerical Methods for Semiconductor Device Simulation
• On the computation of multi-dimensional solution manifolds of parametrized equations
• On the monotone convergence of Newton's method
• Solution Fields of Nonlinear Equations and Continuation Methods
• Some A Posteriori Error Estimators for Elliptic Partial Differential Equations

Cited in

(5)

• Computation of Current-Voltage Characteristics in a Semiconductor Device using Arc-length Continuation
• scientific article; zbMATH DE number 4110042 (Why is no real title available?)
• Device-partition method using equivalent circuit model in two-dimensional device simulation
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS
• scientific article; zbMATH DE number 4098685 (Why is no real title available?)

Describes a project that uses

Uses Software

• PITCON

This page was built for publication: Continuation methods in semiconductor device simulation

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q1119373)