Numerical simulation of the current-voltage characteristics of MIS tunnel devices

DOI10.1016/0021-9991(90)90049-7MaRDI QIDQ2277795zbMATH OpenOpenAlexFDO

Authors Yongwei Xia, Georges Pananakakis, Georges Kamarinos

Publication date 1990

Published in Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/0021-9991(90)90049-7

zbMATH Keywords

current-voltage characteristicsmetal-insulator-semiconductor tunnelNumerical resultspredictor- corrector procedureRunge-Kutta methodsystem of ordinary differential equations

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Multistep, Runge-Kutta and extrapolation methods for ordinary differential equations (65L06) Method of lines for boundary value problems involving PDEs (65N40) Applications to the sciences (65Z05) Motion of charged particles (78A35) Technical applications of optics and electromagnetic theory (78A55)

Review text

Mathematical modelling for the transport of carriers in a metal- insulator-semiconductor tunnel structure leads to a system of ordinary differential equations. For solving it the Runge-Kutta method and predictor-corrector procedure are used. Numerical results are given.

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Cited in

(3)

• Investigation of the dark electrical characteristics of the lateral metal-semiconductor-metal photodetectors using two-dimensional numerical simulation
• Mathematical simulation of charge transport in devices with charge coupling
• Numerical simulation of tunneling through arbitrary potential barriers applied on MIM and MIIM rectenna diodes

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