Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells

DOI10.1016/J.PHYSLETA.2010.05.020MaRDI QIDQ455240zbMATH OpenOpenAlexFDO

Authors F. Ungan, U. Yesilgul, S. Şakiroğlu, E. Kasapoglu, H. Sari, I. Sökmen

Publication date 4 October 2012

Published in Physics Letters. A (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.physleta.2010.05.020

zbMATH Keywords

impurity binding energyintense laser fieldintersubband transitions

Mathematics Subject Classification ID

Lasers, masers, optical bistability, nonlinear optics (78A60) Statistical mechanics of semiconductors (82D37) Electrochemistry (78A57)

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• Effect of electric field on the oscillator strength and cross-section for intersubband transition in a semiconductor quantum ring
• Internal field relaxation and its effect on the energy spectrum and transport characteristics of a quantum well
• LASER INDUCED METAL INSULATOR TRANSITION THROUGH EXCITON MECHANISM IN QUANTUM WELL SYSTEMS
• The intersubband transitions and binding energy of shallow donor impurities in different shaped quantum wells under the magnetic field
• Theoretical and numerical investigations of the energy states and absorption coefficients of quantum dots and quantum anti-dots in the presence of a magnetic field
• Electric-field induced exponential enhancement of electromagnetic absorption in semiconductors at a strong magnetic field
• Intense THz laser effects on off-axis donor impurities in GaAs-AlGaAs coaxial quantum well wires
• Simultaneous effects of laser field and hydrostatic pressure on the intersubband transitions in square and parabolic quantum wells
• The effect of laser field intensity on polarizability in a quantum well
• The effect of terahertz laser field on the optical absorption coefficients and refractive index changes of hyperbolic confinement quantum wells

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