Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells

DOI10.1016/j.physleta.2010.05.020zbMath1248.82070MaRDI QIDQ455240

J. Herrera, D. Rodríguez-Gómez

Publication date: 4 October 2012

Published in: Physics Letters. A (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.physleta.2010.05.020

zbMATH Keywords

intersubband transitions; impurity binding energy; intense laser field

Mathematics Subject Classification ID

82D37: Statistical mechanics of semiconductors

78A60: Lasers, masers, optical bistability, nonlinear optics

78A57: Electrochemistry