Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells
DOI10.1016/J.PHYSLETA.2010.05.020zbMATH Open1248.82070OpenAlexW2090870704MaRDI QIDQ455240FDOQ455240
Authors: F. Ungan, U. Yesilgul, S. Şakiroğlu, E. Kasapoglu, H. Sari, I. Sökmen
Publication date: 4 October 2012
Published in: Physics Letters. A (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.physleta.2010.05.020
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Lasers, masers, optical bistability, nonlinear optics (78A60) Statistical mechanics of semiconductors (82D37) Electrochemistry (78A57)
Cited In (10)
- Effect of electric field on the oscillator strength and cross-section for intersubband transition in a semiconductor quantum ring
- Internal field relaxation and its effect on the energy spectrum and transport characteristics of a quantum well
- LASER INDUCED METAL INSULATOR TRANSITION THROUGH EXCITON MECHANISM IN QUANTUM WELL SYSTEMS
- The intersubband transitions and binding energy of shallow donor impurities in different shaped quantum wells under the magnetic field
- Theoretical and numerical investigations of the energy states and absorption coefficients of quantum dots and quantum anti-dots in the presence of a magnetic field
- Electric-field induced exponential enhancement of electromagnetic absorption in semiconductors at a strong magnetic field
- Intense THz laser effects on off-axis donor impurities in GaAs-AlGaAs coaxial quantum well wires
- Simultaneous effects of laser field and hydrostatic pressure on the intersubband transitions in square and parabolic quantum wells
- The effect of laser field intensity on polarizability in a quantum well
- The effect of terahertz laser field on the optical absorption coefficients and refractive index changes of hyperbolic confinement quantum wells
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