Effect of activation volume on the defect-induced anomalous electronic transport in Rb₀.8Fe₂Se₂

DOI10.1007/S10910-014-0349-6zbMATH Open1320.82072OpenAlexW1030078786MaRDI QIDQ460940FDOQ460940

Authors: Rainer Kwang-Hua Chu 

Publication date: 9 October 2014

Published in: Journal of Mathematical Chemistry (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s10910-014-0349-6

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zbMATH Keywords

activation volumeelectronic transportabsolute reactionboundary perturbationchemical proximity

Mathematics Subject Classification ID

Statistical mechanics of superconductors (82D55) Statistical mechanics of semiconductors (82D37)

Cited In (2)

• Critical activation parameters for LaFeAsO-based superconductors
• Conductivities of ionic fluids in bismuth oxysulfates

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