Effect of activation volume on the defect-induced anomalous electronic transport in Rb₀.8Fe₂Se₂

DOI10.1007/S10910-014-0349-6MaRDI QIDQ460940zbMATHOpenAlexFDO

Authors Rainer Kwang-Hua Chu

Publication date 9 October 2014

Published in Journal of Mathematical Chemistry (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1007/s10910-014-0349-6

zbMATH Keywords

activation volumeelectronic transportabsolute reactionboundary perturbationchemical proximity

Mathematics Subject Classification ID

Statistical mechanics of superconductors (82D55) Statistical mechanics of semiconductors (82D37)

Recommendations

• Critical activation parameters for LaFeAsO-based superconductors
• Electronic transport properties of quasicrystals
• The competition of Hund's coupling and impurity on transport anisotropy in iron-based superconductors
• Nonmagnetic Impurity Effects in MgB₂
• Thermoelectric transport properties of an apparent Fermi liquid: relation to an analytic anomaly in the density of states and application to hole-doped delafossites

Cited in

(2)

• Conductivities of ionic fluids in bismuth oxysulfates
• Critical activation parameters for LaFeAsO-based superconductors

This page was built for publication: Effect of activation volume on the defect-induced anomalous electronic transport in \(\mathrm{Rb}_{0.8}\mathrm{Fe}_2\mathrm{Se}_2\)

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q460940)