Research on parallel finite element methods for the drift-diffusion model in semiconductor device simulations

zbMATH Open1463.65311MaRDI QIDQ5143753FDOQ5143753

Authors Qin Wang, Zhaocan Ma, Shiyang Bai, Linbo Zhang, Benzhuo Lu, Hongliang Li 

Publication date 14 January 2021

zbMATH Keywords

finite element methodssemiconductor devicedrift-diffusion modelparallel simulation

Mathematics Subject Classification ID

Parallel numerical computation (65Y05) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Applications to the sciences (65Z05) Statistical mechanics of semiconductors (82D37) PDEs in connection with semiconductor devices (35Q81)

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Cited In (4)

• An hybrid finite element method for a quasi-variational inequality modeling a semiconductor
• A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
• DevSim
• Simulation of semiconductor devices with a local numerical approach

Uses Software

• PHG
• TMSmesh
• Sentaurus Device

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