Research on parallel finite element methods for the drift-diffusion model in semiconductor device simulations

zbMATH Open1463.65311MaRDI QIDQ5143753FDOQ5143753

Shiyang Bai, Hongliang Li, Qin Wang, Benzhuo Lu, Linbo Zhang, Zhaocan Ma

Publication date: 14 January 2021

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zbMATH Keywords

finite element methodssemiconductor devicedrift-diffusion modelparallel simulation

Mathematics Subject Classification ID

Parallel numerical computation (65Y05) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Applications to the sciences (65Z05) Statistical mechanics of semiconductors (82D37) PDEs in connection with semiconductor devices (35Q81)

Cited In (3)

• An hybrid finite element method for a quasi-variational inequality modeling a semiconductor
• A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
• DevSim

Uses Software

• PHG
• TMSmesh
• Sentaurus Device

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