Research on parallel finite element methods for the drift-diffusion model in semiconductor device simulations

zbMATH Open1463.65311MaRDI QIDQ5143753FDOQ5143753

Authors: Qin Wang, Zhaocan Ma, Shiyang Bai, Linbo Zhang, Benzhuo Lu, Hongliang Li 

Publication date: 14 January 2021

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zbMATH Keywords

finite element methodssemiconductor devicedrift-diffusion modelparallel simulation

Mathematics Subject Classification ID

Parallel numerical computation (65Y05) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Applications to the sciences (65Z05) Statistical mechanics of semiconductors (82D37) PDEs in connection with semiconductor devices (35Q81)

Cited In (4)

• An hybrid finite element method for a quasi-variational inequality modeling a semiconductor
• A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
• DevSim
• Simulation of semiconductor devices with a local numerical approach

Uses Software

• PHG
• TMSmesh
• Sentaurus Device

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