Optimization models for semiconductor dopant profiling
zbMATH Open1115.82038MaRDI QIDQ5294091FDOQ5294091
Authors: Martin Burger, M. Hinze, René Pinnau 
Publication date: 23 July 2007
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optimization problemNewton methodscharge densitydoping profilegradient-based methodsGummel iterationsteepest descent approach
Numerical optimization and variational techniques (65K10) Technical applications of optics and electromagnetic theory (78A55) PDEs in connection with optics and electromagnetic theory (35Q60) Motion of charged particles (78A35) Statistical mechanics of semiconductors (82D37) Optimization problems in optics and electromagnetic theory (78M50)
Cited In (8)
- Semiconductor device design using the \textsc{BiMADS} algorithm
- Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model
- Geometric programming approach to doping profile design optimization of metal-oxide-semiconductor devices
- On/off-state design of semiconductor doping profiles
- OPTIMAL DOPANT PROFILING BASED ON ENERGY-TRANSPORT SEMICONDUCTOR MODELS
- Inverse doping profile of MOSFETs via geometric programming
- Title not available (Why is that?)
- Risk-averse optimal control of semilinear elliptic PDEs
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