A lattice kinetic Monte Carlo study of void morphological evolution during silicon crystal growth

DOI10.1080/08927020701310915zbMath1127.81352OpenAlexW2093363265MaRDI QIDQ5426645

Warren D. Seider, Jianguo Dai, Talid Sinno

Publication date: 13 November 2007

Published in: Molecular Simulation (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1080/08927020701310915

zbMATH Keywords

siliconoxygenlattice kinetic Monte Carlooxygen-vacancy complexesvacancy aggregation

Mathematics Subject Classification ID

Monte Carlo methods (65C05) Molecular physics (81V55)

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