Tunnel barrier and noncollinear magnetization effects on shot noise in ferromagnetic/semiconductor/ferromagnetic heterojunctions
From MaRDI portal
(Redirected from Publication:552853)
Recommendations
- SPIN POLARIZATION AND TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC/SEMICONDUCTOR/FERROMAGNETIC HETEROSTRUCTURE
- Effect of Rashba spin-orbit coupling on the spin-polarized transport in ferromagnet/semiconductor double tunnel junctions
- Spin-polarized transport in structures with tunnel barriers
- TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC SEMICONDUCTOR TUNNEL JUNCTIONS
- Shot noise in normal-ferromagnetic-normal graphene
Cited in
(7)- Spin polarization in parallel double dots with spin-orbit interaction
- Effect of pressure and temperature on spin-dependent tunneling in InAs/GaAs heterostructure with Dresselhaus spin-orbit interaction
- Phonon-assisted tunneling and shot noise in double barrier structures in a longitudinal magnetic field
- SHOT NOISE FOR ELECTRON PAIRS WITH RASHBA INTERACTIONS
- Ballistic anisotropic magnetoresistance in core-shell nanowires and rolled-up nanotubes
- Effect of Rashba spin-orbit coupling on the spin-polarized transport in ferromagnet/semiconductor double tunnel junctions
- Shot noise in normal-ferromagnetic-normal graphene
This page was built for publication: Tunnel barrier and noncollinear magnetization effects on shot noise in ferromagnetic/semiconductor/ferromagnetic heterojunctions
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q552853)