A dynamic model of power metal-oxide-semiconductor field-effect transistor half-bridges for the fast simulation of switching induced electromagnetic emissions
DOI10.1080/13873954.2019.1610899zbMath1500.82019OpenAlexW2945702037WikidataQ127873685 ScholiaQ127873685MaRDI QIDQ5861130
Tobias Glück, Wolfgang Kemmetmüller, D. Büchl, B. Deutschmann, Andreas Kugi
Publication date: 4 March 2022
Published in: Mathematical and Computer Modelling of Dynamical Systems (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1080/13873954.2019.1610899
electromagnetic compatibility (EMC)power inverterconducted electromagnetic emission (EME)metal-oxide-semiconductor field-effect transistor (MOSFET)physics based modeling
Statistical mechanics of semiconductors (82D37) Technical applications of optics and electromagnetic theory (78A55) Analytic circuit theory (94C05)
Cites Work
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