Strong solutions for pair diffusion models in homogeneous semiconductors

DOI10.1016/S1468-1218(01)00010-4zbMATH Open1003.82012OpenAlexW1976702798MaRDI QIDQ5952947FDOQ5952947

Authors: W. Merz, Annegret Glitzky, R. Hünlich, K. Pulverer 

Publication date: 13 January 2003

Published in: Nonlinear Analysis. Real World Applications (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/s1468-1218(01)00010-4

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zbMATH Keywords

energy estimatesreaction-drift-diffusion equationsdopant diffusion

Mathematics Subject Classification ID

Reaction-diffusion equations (35K57) Statistical mechanics of semiconductors (82D37)

Cites Work

• Linear and quasilinear elliptic equations
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• Structure of the set of stationary solutions of the navier‐stokes equations
• Elliptic Partial Differential Equations of Second Order
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• The Debye system: existence and large time behavior of solutions
• Global estimates and asymptotics for electro reaction diffusion systems in heterostructures
• Boundedness and continuity of solutions to linear elliptic boundary value problems in two dimensions
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Cited In (5)

• Local existence result of the dopant diffusion in arbitrary space dimensions
• A parabolic system model for the formation of porous silicon: existence, uniqueness, and stability
• Global properties of pair diffusion models
• Title not available (Why is that?)
• Strong solutions for reaction-drift-diffusion problems in semiconductor technology

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