Strong solutions for pair diffusion models in homogeneous semiconductors

DOI10.1016/S1468-1218(01)00010-4MaRDI QIDQ5952947zbMATH OpenOpenAlexFDO

Authors W. Merz, Annegret Glitzky, R. Hünlich, K. Pulverer

Publication date 13 January 2003

Published in Nonlinear Analysis. Real World Applications (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/s1468-1218(01)00010-4

zbMATH Keywords

dopant diffusionenergy estimatesreaction-drift-diffusion equations

Mathematics Subject Classification ID

Reaction-diffusion equations (35K57) Statistical mechanics of semiconductors (82D37)

Review text

A mathematical model consisting of a set of parabolic and elliptic equations which comes from the modern silicon technology is studied. The main result is an existence and uniqueness theorem. The existence part is deduced from the Leray-Schauder principle after obtaining several estimates of solutions.

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Cited in

(5)

• Local existence result of the dopant diffusion in arbitrary space dimensions
• Global properties of pair diffusion models
• Strong solutions for reaction-drift-diffusion problems in semiconductor technology
• scientific article; zbMATH DE number 917224 (Why is no real title available?)
• A parabolic system model for the formation of porous silicon: existence, uniqueness, and stability

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