Strong solutions for pair diffusion models in homogeneous semiconductors (Q5952947)
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scientific article; zbMATH DE number 1690603
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| English | Strong solutions for pair diffusion models in homogeneous semiconductors |
scientific article; zbMATH DE number 1690603 |
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Strong solutions for pair diffusion models in homogeneous semiconductors (English)
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13 January 2003
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A mathematical model consisting of a set of parabolic and elliptic equations which comes from the modern silicon technology is studied. The main result is an existence and uniqueness theorem. The existence part is deduced from the Leray-Schauder principle after obtaining several estimates of solutions.
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dopant diffusion
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reaction-drift-diffusion equations
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energy estimates
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0.8186985850334167
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0.7992969751358032
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0.7920128107070923
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0.7900146245956421
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