Thermoelastic stresses in sic single crystals grown by the physical vapor transport method

DOI10.1007/S10409-005-0090-2MaRDI QIDQ608697zbMATH OpenOpenAlexFDO

Authors Sumit K. Garg

Publication date 25 November 2010

Published in Acta Mechanica Sinica (Search for Journal in Brave)

Full work available at URL http://dspace.imech.ac.cn/handle/311007/16474

zbMATH Keywords

thermal stressthermoelasticphysical vapor transportsilicon carbidethermal expansion match

Mathematics Subject Classification ID

Thermal effects in solid mechanics (74F05) Finite element methods applied to problems in solid mechanics (74S05) Crystalline structure (74E15)

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Cited in

(2)

• Thermoelastic stress in thin large-area windows grown from melt by the Stepanov method
• Thermal and residual stresses of Czochralski-grown semiconducting material

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