Thermoelastic stresses in sic single crystals grown by the physical vapor transport method

DOI10.1007/S10409-005-0090-2zbMATH Open1200.74050OpenAlexW2128448093MaRDI QIDQ608697FDOQ608697

Authors: Sumit K. Garg 

Publication date: 25 November 2010

Published in: Acta Mechanica Sinica (Search for Journal in Brave)

Full work available at URL: http://dspace.imech.ac.cn/handle/311007/16474

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zbMATH Keywords

thermal stressthermoelasticphysical vapor transportsilicon carbidethermal expansion match

Mathematics Subject Classification ID

Thermal effects in solid mechanics (74F05) Finite element methods applied to problems in solid mechanics (74S05) Crystalline structure (74E15)

Cited In (2)

• Thermoelastic stress in thin large-area windows grown from melt by the Stepanov method
• Thermal and residual stresses of Czochralski-grown semiconducting material

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