Giant optical anisotropy in M-plane GaN/AlGaN quantum wells due to crystal-field effect

DOI10.1016/J.PHYSLETA.2008.07.048zbMATH Open1223.82057OpenAlexW1974330027MaRDI QIDQ641440FDOQ641440

Authors: Chun-Nan Chen, Wei-Long Su, Kuo-Ching Chang, Sheng-Hsiung Chang, Jih-Chen Chiang, Ikai Lo, Wan-Tsang Wang, Hsiu-Fen Kao, Meng-En Lee 

Publication date: 21 October 2011

Published in: Physics Letters. A (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.physleta.2008.07.048

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zbMATH Keywords

crystal field\(M\)-planeoptical anisotropyvalence band mixingwurtzite

Mathematics Subject Classification ID

Diffraction, scattering (78A45) Finite difference methods applied to problems in optics and electromagnetic theory (78M20) Statistical mechanics of crystals (82D25)

Cited In (8)

• The character of oblique anisotropy in quantum wells formed by vacuum deposition
• Barrier effects on the optoelectronic properties of GaN-based irregular multiple quantum wells for dichromatic white LEDs
• Quantum confined Stark effect on intersubband transitions in strained wurtzite nitride quantum wells
• \({k\cdot p}\) wurtzite Hamiltonian and optical matrix with bulk inversion asymmetry
• Theoretical modeling for quantum-confined Stark effect due to internal piezoelectric fields in GaInN strained quantum wells
• In-plane optical anisotropy of strained wurtzite GaN in the \(A\)- and \(R\)-planes
• Analysis of boundary conditions for the envelope functions of \(\mathrm{GaN}/\mathrm{InGaN}(0001)\) heterostructures
• THE OPTICAL KERR EFFECT IN WURTZITEGaN-BASED DOUBLE QUANTUM WELLS: INFLUENCES OF PIEZOELECTRICITY AND SPONTANEOUS POLARIZATION

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