An interface formulation for the Poisson equation in the presence of a semiconducting single-layer material

DOI10.1051/M2AN/2024021arXiv2301.13483MaRDI QIDQ6424932FDOQ6424932

Publication date: 31 January 2023

Abstract: In this paper, we consider a semiconducting device with an active zone made of a single-layer material. The associated Poisson equation for the electrostatic potential (to be solved in order to perform self-consistent computations) is characterized by a surface particle density and an out-of-plane dielectric permittivity in the region surrounding the single-layer. To avoid mesh refinements in such a region, we propose an interface problem based on the natural domain decomposition suggested by the physical device. Two different interface continuity conditions are discussed. Then, we write the corresponding variational formulations adapting the so called three-fields formulation for domain decomposition and we approximate them using a proper finite element method. Finally, numerical experiments are performed to illustrate some specific features of this interface approach.

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Mathematics Subject Classification ID

Multigrid methods; domain decomposition for boundary value problems involving PDEs (65N55) Laplace operator, Helmholtz equation (reduced wave equation), Poisson equation (35J05) Variational methods for second-order elliptic equations (35J20) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30)

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