Investigating the charge relaxation in semiconductor heterostructures with quantum wells by means of admittance spectroscopy
From MaRDI portal
Publication:694101
DOI10.3103/S1062873811100273zbMATH Open1253.82096MaRDI QIDQ694101FDOQ694101
Authors: A. N. Petrovskaya, V. I. Zubkov 
Publication date: 11 December 2012
Published in: Bulletin of the Russian Academy of Sciences: Physics (Search for Journal in Brave)
Recommendations
- Analysis of nonexponential capacitance relaxation signals
- Calculation of profile of charge carrier concentration in modulation doped structure with a wide potential well
- Effect of electric fields on the transmission of a double heterostructure based on GaN with a quantum well
- THE THEORETICAL RESEARCH ON I-V CURVE IN MULTI-QUANTUM WELLS OF SEMICONDUCTORS
- Resonant tunneling characteristics for a semiconductor quantum well
Cited In (2)
This page was built for publication: Investigating the charge relaxation in semiconductor heterostructures with quantum wells by means of admittance spectroscopy
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q694101)
