THE THEORETICAL RESEARCH ON I-V CURVE IN MULTI-QUANTUM WELLS OF SEMICONDUCTORS

DOI10.1142/S0129183106008686zbMATH Open1107.82409MaRDI QIDQ5481809FDOQ5481809

Authors: Bin Yang, Jie Zhang, Xiao-Gong Jing, Yong-Fang Zhao 

Publication date: 24 August 2006

Published in: International Journal of Modern Physics C (Search for Journal in Brave)

Recommendations

• Resonant tunneling characteristics for a semiconductor quantum well
• SIMULATION OF DEFECT ASSISTED TUNNELING AND ITS EFFECT ON I‐V CHARACTERISTICS IN RESONANT TUNNELING DIODES
• A note on current-voltage characteristics from the quantum hydrodynamic equations for semiconductors
• The intersubband transitions and binding energy of shallow donor impurities in different shaped quantum wells under the magnetic field
• Accuracy of the Frensley inflow boundary condition for Wigner equations in simulating resonant tunneling diodes

zbMATH Keywords

transmission coefficientresonant tunneling\(I-V\) characteristic curvemulti-quantum wellnegative differential resistance effect

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cited In (2)

• Investigating the charge relaxation in semiconductor heterostructures with quantum wells by means of admittance spectroscopy
• Investigation of the dark electrical characteristics of the lateral metal-semiconductor-metal photodetectors using two-dimensional numerical simulation

This page was built for publication: THE THEORETICAL RESEARCH ON I-V CURVE IN MULTI-QUANTUM WELLS OF SEMICONDUCTORS

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q5481809)