Gradient bounds for a thin film epitaxy equation
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Publication:729924
DOI10.1016/J.JDE.2016.10.025zbMATH Open1364.35115arXiv1410.7572OpenAlexW2962817781WikidataQ57653335 ScholiaQ57653335MaRDI QIDQ729924FDOQ729924
Authors: Dong Li, Tao Tang, Zhonghua Qiao 
Publication date: 22 December 2016
Published in: Journal of Differential Equations (Search for Journal in Brave)
Abstract: We consider a gradient flow modeling the epitaxial growth of thin films with slope selection. The surface height profile satisfies a nonlinear diffusion equation with biharmonic dissipation. We establish optimal local and global wellposedness for initial data with critical regularity. To understand the mechanism of slope selection and the dependence on the dissipation coefficient, we exhibit several lower and upper bounds for the gradient of the solution in physical dimensions .
Full work available at URL: https://arxiv.org/abs/1410.7572
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PDEs in connection with fluid mechanics (35Q35) Dependence of solutions to PDEs on initial and/or boundary data and/or on parameters of PDEs (35B30) Higher-order parabolic equations (35K25)
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Cited In (20)
- Stability and convergence analysis for the implicit-explicit method to the Cahn-Hilliard equation
- Finite time blow-up for a thin-film equation with initial data at arbitrary energy level
- An improved gradient bound for 2D MBE
- Thin film epitaxy with or without slope selection
- Global well-posedness of weak solutions and a regularity criterion of strong solutions for an epitaxial growth model
- Global well-posedness of solutions for the epitaxy thin film growth model
- Errors of an Implicit Variable-Step BDF2 Method for a Molecular Beam Epitaxial Model with Slope Selection
- Global well-posedness and regularity criteria for epitaxial growth models
- Characterizing the stabilization size for semi-implicit Fourier-spectral method to phase field equations
- Well-posedness and stability for a class of fourth-order nonlinear parabolic equations
- Ground state solution of the thin film epitaxy equation
- Unconditionally stable schemes for equations of thin film epitaxy
- On the Cahn-Hilliard-Brinkman Equations in $\mathbb{R}^4$: Global Well-Posedness
- Global well-posedness and large time behavior of epitaxy thin film growth model
- The operator-splitting method for Cahn-Hilliard is stable
- Infinitely many sign-changing solutions for a class of biharmonic equation with \(p\)-Laplacian and Neumann boundary condition
- Global dynamics of a fourth-order parabolic equation describing crystal surface growth
- Continuum limits of discrete thin films with superlinear growth densities
- On second order semi-implicit Fourier spectral methods for 2D Cahn-Hilliard equations
- The BDF3/EP3 scheme for MBE with no slope selection is stable
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