Gradient bounds for a thin film epitaxy equation
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Abstract: We consider a gradient flow modeling the epitaxial growth of thin films with slope selection. The surface height profile satisfies a nonlinear diffusion equation with biharmonic dissipation. We establish optimal local and global wellposedness for initial data with critical regularity. To understand the mechanism of slope selection and the dependence on the dissipation coefficient, we exhibit several lower and upper bounds for the gradient of the solution in physical dimensions .
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Cites work
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- Strong ill-posedness of the incompressible Euler equation in borderline Sobolev spaces
- Strong illposedness of the incompressible Euler equation in integer \(C^m\) spaces
- Thin film epitaxy with or without slope selection
- Unconditionally stable schemes for equations of thin film epitaxy
Cited in
(20)- The operator-splitting method for Cahn-Hilliard is stable
- Errors of an Implicit Variable-Step BDF2 Method for a Molecular Beam Epitaxial Model with Slope Selection
- An improved gradient bound for 2D MBE
- Stability and convergence analysis for the implicit-explicit method to the Cahn-Hilliard equation
- Ground state solution of the thin film epitaxy equation
- Global well-posedness of weak solutions and a regularity criterion of strong solutions for an epitaxial growth model
- Thin film epitaxy with or without slope selection
- Unconditionally stable schemes for equations of thin film epitaxy
- The BDF3/EP3 scheme for MBE with no slope selection is stable
- On the Cahn-Hilliard-Brinkman Equations in $\mathbb{R}^4$: Global Well-Posedness
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- Global well-posedness and regularity criteria for epitaxial growth models
- Global well-posedness of solutions for the epitaxy thin film growth model
- Global well-posedness and large time behavior of epitaxy thin film growth model
- Global dynamics of a fourth-order parabolic equation describing crystal surface growth
- Continuum limits of discrete thin films with superlinear growth densities
- Finite time blow-up for a thin-film equation with initial data at arbitrary energy level
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