The effect of fast neutrons on the conductance of single-crystal silicon

DOI10.1007/S11182-009-9269-5zbMATH Open1180.82208OpenAlexW1984409504MaRDI QIDQ844835FDOQ844835

Authors: V. A. Varlachev, E. S. Solodovnikov 

Publication date: 5 February 2010

Published in: Russian Physics Journal (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s11182-009-9269-5

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zbMATH Keywords

nuclear reactorsingle crystalfast neutronsspecific conductancestructural defects

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cited In (5)

• The model of radiation-induced conductivity in silicon
• Parameters measurement for the thermal neutron beam in the thermal column hole of Xi'an pulse reactor
• Feaures of photoconductivity of Ge and Si with disordered regions
• Silicon planar detectors adapted to slow neutron detection
• Calculating the ambient dose equivalent of fast neutrons using elemental composition of human body

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