TCAD simulation of radiation effects of pulsed neutrons in silicon bipolar junction transistor

zbMATH Open1463.65455MaRDI QIDQ5143751FDOQ5143751

Authors: Binghuang Duan, Cen Xiong, Quanyou Chen, Hongchao Zhao 

Publication date: 14 January 2021

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zbMATH Keywords

displacement damagepulsed neutron radiationSilicon bipolar junction transistorTCAD simulation

Mathematics Subject Classification ID

Applications to the sciences (65Z05)

Cited In (6)

• The effect of fast neutrons on the conductance of single-crystal silicon
• Damage mechanism analysis and protection method of ionizing radiation based on electromagnetic radiation characteristics
• The model of radiation-induced conductivity in silicon
• Simulations of the total ionization dose effect on 4T CMOS image sensor dark current
• Numerical simulation of hole and \({\mathrm{H}}^+\) transportation at \({\mathrm{Si}}/{\mathrm{SiO}}_2\) interface
• Simulation of femtosecond pulsed laser effects on MOS electronics using TCAD Sentaurus customized models

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