TCAD simulation of radiation effects of pulsed neutrons in silicon bipolar junction transistor

MaRDI QIDQ5143751zbMATH OpenFDO

Authors Binghuang Duan, Cen Xiong, Quanyou Chen, Hongchao Zhao

Publication date 14 January 2021

zbMATH Keywords

displacement damagepulsed neutron radiationSilicon bipolar junction transistorTCAD simulation

Mathematics Subject Classification ID

Applications to the sciences (65Z05)

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(6)

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