TCAD simulation of radiation effects of pulsed neutrons in silicon bipolar junction transistor

zbMATH Open1463.65455MaRDI QIDQ5143751FDOQ5143751

Authors: Binghuang Duan, Cen Xiong, Quanyou Chen, Hongchao Zhao 

Publication date: 14 January 2021

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zbMATH Keywords

displacement damagepulsed neutron radiationSilicon bipolar junction transistorTCAD simulation

Mathematics Subject Classification ID

Applications to the sciences (65Z05)

Cited In (3)

• The effect of fast neutrons on the conductance of single-crystal silicon
• The model of radiation-induced conductivity in silicon
• Simulation of femtosecond pulsed laser effects on MOS electronics using TCAD Sentaurus customized models

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