Simulation of femtosecond pulsed laser effects on MOS electronics using TCAD Sentaurus customized models

DOI10.1002/JNM.736zbMATH Open1197.78056OpenAlexW4231566864MaRDI QIDQ3585592FDOQ3585592

Authors:

Publication date: 20 August 2010

Published in: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/jnm.736

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zbMATH Keywords

3D simulationmixed-mode simulationheavy ionfemtosecond pulsed lasersingle event effectTCAD Sentaurus

Mathematics Subject Classification ID

Lasers, masers, optical bistability, nonlinear optics (78A60) Boundary value problems for second-order elliptic equations (35J25) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37) Finite element, Galerkin and related methods applied to problems in optics and electromagnetic theory (78M10)

Cites Work

• The Kinetic Formulation of Conduction Problems

Cited In (1)

• TCAD simulation of radiation effects of pulsed neutrons in silicon bipolar junction transistor

Uses Software

• SRIM

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